SPEAKER PROFILE |
 Dr. Holger Bartolf Corporate Research Center, ABB SWITZERLAND |
Development of High-Power Semiconductors
Abstract
Semiconductor materials led to more compact designs, greater reliability, lower losses, lower costs and improved ease of use. They opened the technology to new applications while developing it to levels of performance and sophistication orders of magnitude beyond what would otherwise have been possible.
We present the development of the next generation of high-voltage power-devices, based on silicon and WBG-materials. These current-switches have the potential to tremendously change the efficiency and circuit-topology of electrical power transformation systems (e.g. HVDC, traction, renewable energy conversion, automotive drives, etc...).
Since 2011, Holger Bartolf works as a Scientist in the group Power Semiconductor Devices at the Swiss Corporate Research Center of the Asea Brown Boveri (ABB) organization (>105 employees, business volume 109 $). He is involved in the development of advanced wide-band gap (WBG) power semiconductors, where he contributes mostly with his expertise on device design, project organization and manufacturing know-how (especially in deep reactive ion etching). Since 2014 he is leading a team of scientists in a large project focussing on prototype developments of power devices (uni- and bipolar, rectifiers as well as switches). In the frame of an interdepartmental activity (coordination of a workpackage in a large EU project), he is responsible for the MOSa-interface related activities within ABB Corporate Research.
The WBG research will enable the next generation of high-voltage power-devices. These current-switches have the potential to tremendously change the efficiency and circuit- topology of electrical power transformation systems (e.g. HVDCb, traction, renewable energy conversion, automotive drives, etc...).
a. metal-oxide-semiconductor.
b. high-voltage direct-current
We present the development of the next generation of high-voltage power-devices, based on silicon and WBG-materials. These current-switches have the potential to tremendously change the efficiency and circuit-topology of electrical power transformation systems (e.g. HVDC, traction, renewable energy conversion, automotive drives, etc...).
Bio
Holger Bartolf received the diploma degree in solid-state physics from the Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany, in 2004. His work generated three publications in the field of quantum phase transitions. He started his Ph. D. studies in 2005 at the University of Zürich, Zürich, Switzerland. His thesis focused on the development of superconducting single-photon detectors, on the 50 nm-scale, in collaboration to the FIRST Center for Micro- and Nanoscience of ETH Zürich and the German Aerospace Center (DLR). From scratch, he developed the manufacturing process as well as he characterized the light-sensitive devices. Finally he handled the statistical data evaluation and interpretation. He received the Dr.sc.nat. degree from the Faculty of Science in 2009. In 2010, he was awarded a research grant (90 kCHF; 97 grants out of 282 proposals) from the University of Zürich to pursue his post-doctoral research in the field of superconducting nanoscaled fluctuation-mechanisms.Since 2011, Holger Bartolf works as a Scientist in the group Power Semiconductor Devices at the Swiss Corporate Research Center of the Asea Brown Boveri (ABB) organization (>105 employees, business volume 109 $). He is involved in the development of advanced wide-band gap (WBG) power semiconductors, where he contributes mostly with his expertise on device design, project organization and manufacturing know-how (especially in deep reactive ion etching). Since 2014 he is leading a team of scientists in a large project focussing on prototype developments of power devices (uni- and bipolar, rectifiers as well as switches). In the frame of an interdepartmental activity (coordination of a workpackage in a large EU project), he is responsible for the MOSa-interface related activities within ABB Corporate Research.
The WBG research will enable the next generation of high-voltage power-devices. These current-switches have the potential to tremendously change the efficiency and circuit- topology of electrical power transformation systems (e.g. HVDCb, traction, renewable energy conversion, automotive drives, etc...).
a. metal-oxide-semiconductor.
b. high-voltage direct-current