Extreme ultraviolet (EUV) lithography at 13.5 nm wavelength is currently considered as the most promising alternative to DUV immersion lithography for high-volume semiconductor manufacturing at 7 nm technology node and below. At PSI we are operating an EUV interference lithography (EUV-IL) platform which has been a powerful tool for academic and for industrial research. EUV-IL combines the simplicity of IL and the short wavelength advantage of EUV light and, therefore, is an effective method of making high-resolution nanostructures. The EUV-IL platform at PSI is the world-leading tool with a resolution of down to 6 nm half-pitch, marking the world record in photolithography. One of the main advantages of EUV light is its relatively small secondary-electron blur which we address with experimental methods.

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Bio

Yasin Ekinci received his PhD from Max Planck Institute for Dynamics and Self Organization in Göttingen, Germany, in 2003. Since 2009 he is a senior scientist at Paul Scherrer Institute. He is the head of the Advanced Lithography and Metrology Group in Laboratory for Micro- and Nanotechnology and manager of the XIL-II beamline at Swiss Light Source. He works on EUV interference lithography and lensless imaging along with other topics in nanoscience.