Scaling has long since ceased to be sufficient to support the performance improvements expected from the next generation technology. In this talk, I will address some of the new trends in exploratory materials development for beyond Moore applications. In particular I will focus on topics such as the monolithic and heterogeneous integration of III-V's for photonics and high-performance electronics and on oxide-based materials for native neuromorphic devices. Finally, novel types of topologically protected materials and device geometries for applications in quantum computing will be discussed.

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Bio

Kirsten E. Moselund received the M.Sc. degree in engineering from the Technical University of Denmark in 2003 and the Ph.D. degree in microelectronics from the Swiss Federal Institute of Technology in Lausanne (EPFL), Lausanne, Switzerland, in 2008. In 2008, she joined the IBM Zurich – Research, where she is currently managing the Materials Integration and Nanoscale Devices group, which among other things focuses on the development of exploratory electronic and photonic materials and devices, and on their experimental demonstration in the BRNC Nanotechnology Center. As well as on exploratory materials science in general, in particular monolithic integration of III-Vs on silicon.

She also holds an ERC grant, and is a member of the executive committee of the IEDM, as well as an editor of the IEEE J-EDS