Extreme UltraViolet (EUV) lithography has come a long way since the pioneering work in the mid 1980’s.
In 2019 the first commercially available smartphones, which included IC’s made with EUV, demonstrated that EUV had entered high volume manufacturing.
EUV 0.33 numerical aperture is currently being used in volume production of logic as well as DRAM IC makers.
The latest step in the EUV technology has been the realization of an 0.55 numerical aperture EUV scanner, currently installed at the ASML-IMEC high-NA lab in Veldhoven as well as at multiple customer sites. Last year we printed full field, scanning, 8nm lines and spaces showing the imaging capability of this system
ASML and Zeiss are currently exploring next steps in our EUV roadmap, a “hyper-NA” system with a numerical aperture larger than 0.7 which will extend the single patterning capabilities down to 5nm lines & spaces.
Bio
Dr. Benschop received his M.Sc. (cum laude) and PhD in physics from University of Twente.
From 1984 until 1997 he worked at Philips Research Labs in Eindhoven as well as Sunnyvale (CA-USA).
He joined ASML in 1997 where he started the ASML program on EUV Lithography.
As Executive Vice President Technology he is currently responsible for Research, System Engineering, Corporate IP department and the Technology Development Center.
Dr. Benschop published over 42 papers and is (co-)inventor of more than 24 patents.
He is a member of the Netherlands Academy of Engineering (NAE), a fellow of the SPIE and has been appointed by the King of The Netherlands as advisor to Dutch government and parliament for Science, Technology and Innovation (AWTI).