Impurity doping guarantees the possibility to finely tune the electrical response of semiconductor materials by changing the average concentration of dopants in the semiconductor matrix. The scaling of microelectronic devices introduced new challenges for conventional doping technologies, because local fluctuation in dopant concentration increase fluctuations in device-to-device performances. For this reason, deterministic incorporation of individual donors in silicon as well as localization of each impurity dopant with high spatial precision has been the subject of an intense research activity aiming to reduce variability of conventional microelectronic devices and to fabricate new devices exploiting individual impurities as key elements for single electron devices or quantum computation. In this talk we provide an overview of the most recent results we obtained to control dopant positioning at the nanoscale, integrating well established top-down technologies with bottom upon approaches based on the introduction of novel self-assembly materials.

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Bio

Michele Perego received the Degree in Physics from Università degli Studi dell’Insubria in 1999. In February 2004 he obtained the PhD in Physics, Astrophysics and Applied Physics from the University of Milano. In the period 2004-2007 he has been Post-Doctoral Fellow at the MDM Laboratory. He has been employed as a Research Scientist from 2007 to 2019 at IMM-Unit of Agrate Brianza. In 2019 he became Senior Research Scientist. Since 2020 he has been appointed Research Director at CNR-IMM. He is interested in the development of novel strategies to control matter at the nanoscale, integrating self-assembling materials into conventional top-down processes.